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HFA1112/883
June 1994
Ultra High Speed Programmable Gain Buffer Amplifier
Description
The HFA1112/883 is a closed loop buffer that achieves a high degree of gain accuracy, wide bandwidth, and low distortion. Manufactured on the Intersil proprietary complementary bipolar UHF-1 process, the HFA1112/883 also offers very fast slew rates, and high output current. A unique feature of the pinout allows the user to select a voltage gain of +1, -1, or +2, without the use of any external components. The result is a more flexible product, fewer part types in inventory, and more efficient use of board space. Component and composite video systems will also benefit from this buffer's performance, as indicated by the excellent gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase specifications (RL = 150). Compatibility with existing op amp pinouts provides flexibility to upgrade low gain amplifiers, while decreasing component count. Unlike most buffers, the standard pinout provides an upgrade path should a higher closed loop gain be needed at a future date. This amplifier is available with programmable output clamps as the HFA1113/883. For applications requiring a standard buffer pinout, please refer to the HFA1110/883 datasheet.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * User Programmable For Closed-Loop Gains of +1, -1 or +2 Without Use of External Resistors * Low Differential Gain and Phase . . . . 0.02%/0.04 Deg. * Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ) * Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . 2400V/s (Typ) * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ) * Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ) * Excellent Gain Accuracy . . . . . . . . . . . . . . 0.99V/V (Typ) * High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ) * Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)
Applications
* Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers * RF/IF Signal Processing * Flash A/D Driver * Medical Imaging Systems
Ordering Information
PART NUMBER HFA1112MJ/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 8 Lead Ceramic DIP
Pinout
HFA1112/883 (CERDIP) TOP VIEW
300 300 +IN V3 4 + -IN 2 7 6 5 V+ OUT NC
NC
1
8
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
Spec Number
3-184
511084-883 File Number 3610.1
Specifications HFA1112/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VOutput Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .55mA Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Storage Temperature Range . . . . . . . . . . . . . . -65oC TA +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W 30oC/W Maximum Package Power Dissipation at +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W Package Power Dissipation Derating Factor above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Operating Temperature Range . . . . . . . . . . . . .-55oC TA +125oC RL 50
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at VSUPPLY = 5V, RSOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Power Supply Rejection Ratio PSRRP VSUP = 1.25V V+ = 6.25V, V- = -5V V+ = 3.75V, V- = -5V VSUP = 1.25V V+ = 5V, V- = -6.25V V+ = 5V, V- = -3.75V VCM = 0V VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V Note 1 1 2, 3 1 2, 3 1 2, 3 CMSIBP 1 2, 3 1 2, 3 Gain (VOUT = 2VP-P) Gain (VOUT = 2VP-P) Gain (VOUT = 4VP-P) Output Voltage Swing AVP1 AVM1 AVP2 VOP100 VON100 Output Voltage Swing VOP50 VON50 AV = +1 VIN = -1V to +1V AV = -1 VIN = -1V to +1V AV = +2 VIN = -1V to +1V AV = -1 RL = 100 AV = -1 RL = 100 AV = -1 RL = 50 AV = -1 RL = 50 VIN = -3.2V VIN = -2.7V VIN = +3.2V VIN = +2.7V VIN = -2.7V VIN = -2.25V VIN = +2.7V VIN = +2.25V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1, 2 3 1, 2 3 LIMITS TEMPERATURE +25oC +125oC, +125oC, -55oC -55oC +25oC MIN -25 -40 39 35 39 35 -40 -65 25 20 0.980 0.975 0.980 0.975 1.960 1.950 3 2.5 2.5 1.5 MAX 25 40 40 65 40 50 1.020 1.025 1.020 1.025 2.040 2.050 -3 -2.5 -2.5 -1.5 UNITS mV mV dB dB dB dB A A A/V A/V k k V/V V/V V/V V/V V/V V/V V V V V V V V V
D.C. PARAMETERS Output Offset Voltage
SYMBOL VOS
CONDITIONS VCM = 0V
PSRRN
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC -55oC +25oC, +125oC -55oC
Non-Inverting Input (+IN) Current +IN Common Mode Rejection +IN Resistance
IBSP
+RIN
Spec Number 3-185
511084-883
Specifications HFA1112/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at VSUPPLY = 5V, RSOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1, 2 3 -IOUT Quiescent Power Supply Current ICC IEE NOTES: 1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN = 1/CMSIBP . 2. Guaranteed from VOUT Test with RL = 50, by: IOUT = VOUT/50. Note 2 1, 2 3 RL = 100 RL = 100 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC, +125oC -55oC +25oC, +125oC -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 50 30 14 -26 -33 MAX -50 -30 26 33 -14 UNITS mA mA mA mA mA mA mA mA
D.C. PARAMETERS Output Current
SYMBOL +IOUT Note 2
CONDITIONS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at VSUPPLY = 5V, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS -3dB Bandwidth SYMBOL BW(-1) BW(+1) BW(+2) Gain Flatness GF30 GF50 GF100 Slew Rate +SR(-1) -SR(-1) +SR(+1) -SR(+1) +SR(+2) -SR(+2) Rise and Fall Time TR(-1) TF(-1) TR(+1) TF(+1) TR(+2) TF(+2) CONDITIONS AV = -1, VOUT = 200mVP-P AV = +1, VOUT = 200mVP-P AV = +2, VOUT = 200mVP-P AV = +2, f 30MHz VOUT = 200mVP-P AV = +2, f 50MHz VOUT = 200mVP-P AV = +2, f 100MHz VOUT = 200mVP-P AV = -1, VOUT = 5VP-P AV = -1, VOUT = 5VP-P AV = +1, VOUT = 5VP-P AV = +1, VOUT = 5VP-P AV = +2, VOUT = 5VP-P AV = +2, VOUT = 5VP-P AV = -1, VOUT = 0.5VP-P AV = -1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P NOTES 1 1 1 1 1 1 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN 450 500 350 1500 1800 900 800 1200 1100 MAX 0.04 0.08 0.22 750 800 750 750 1000 1000 UNITS MHz MHz MHz dB dB dB V/s V/s V/s V/s V/s V/s ps ps ps ps ps ps
Spec Number 3-186
511084-883
Specifications HFA1112/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at VSUPPLY = 5V, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS Overshoot SYMBOL +OS(-1) -OS(-1) +OS(+1) -OS(+1) +OS(+2) -OS(+2) Settling Time TS(0.1) TS(0.05) 2nd Harmonic Distortion HD2(30) HD2(50) HD2(100) 3rd Harmonic Distortion HD3(30) HD3(50) HD3(100) NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot-to-lot and within lot variation. 2. Measured between 10% and 90% points. 3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV = +1. Please refer to Performance curves. CONDITIONS AV = -1, VOUT = 0.5VP-P AV = -1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P AV = +2, to 0.1% VOUT = 2V to 0V AV = +2, to 0.05% VOUT = 2V to 0V AV = +2, f = 30MHz VOUT = 2VP-P AV = +2, f = 50MHz VOUT = 2VP-P AV = +2, f = 100MHz VOUT = 2VP-P AV = +2, f = 30MHz VOUT = 2VP-P AV = +2, f = 50MHz VOUT = 2VP-P AV = +2, f = 100MHz VOUT = 2VP-P NOTES 1, 3 1, 3 1, 3 1, 3 1, 3 1, 3 1 1 1 1 1 1 1 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN MAX 30 25 65 60 20 20 20 33 -45 -40 -35 -65 -55 -45 UNITS % % % % % % ns ns dBc dBc dBc dBc dBc dBc
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 1), 2, 3 1, 2, 3 1
Spec Number 3-187
511084-883
HFA1112/883 Die Characteristics
DIE DIMENSIONS: 63 x 44 x 19 mils 1 mils 1600m x 1130m x 483m 25.4m METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA WORST CASE CURRENT DENSITY: 2.0 x 105 A/cm2 at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA
Metallization Mask Layout
HFA1112/883
NC
+IN
V-
NC
-IN
NC
NC
V+
OUT
Spec Number 3-188
511084-883
HFA1112/883 Test Circuit (Applies to Table 1)
V+ ICC + 10 0.1
VOS = 510 7 2 2 1 0.1 100K (0.01%) K1 2 0.1 3 + 100 4 K3 10 0.1 100 DUT 6 0.1 470pF + x100 510 1K VOUT VY
VY 100
NC K2 -VIN +VIN 1
+IBIAS =
VZ 100K VZ
+ HA-5177
0.1
+
NOTE:
IEE
1. All Resistors = 1% () 2. All Capacitors = 10% (F) 3. Unless Otherwise Noted 4. Chip Components Recommended 5. For AV = +1, K1 = Position 1, K2 = Position 1 6. For AV = +2, K1 = Position 1, K2 = Position 2, -VIN = 0V 7. For AV = -1, K1 = Position 1, K2 = Position 2, +VIN = 0V
V-
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3) AV = +1 or +2 TEST CIRCUIT
V+ 3 + 2 RS 50 RG V7 6 4 50 50 VOUT 2 RS 50 VIN
AV = -1 TEST CIRCUIT
V+ 2 3+ 7 6 4 50 50 VVOUT 2
VIN
NOTE: 1. VS = 5V, RG = 0 for AV = +2, RG = for AV = +1 2. RF = Internal, RS = 50 3. RL = 100 For Small and Large Signals
NOTE: 1. VS = 5V, AV = -1 2. RF = Internal 3. RS = 50, RL = 100 For Small and Large Signals
LARGE SIGNAL WAVEFORM
VOUT +2.5V 90% +SR -2.5V 10% 10% 90% -SR -2.5V TR , +OS -250mV +2.5V VOUT +250mV
SMALL SIGNAL WAVEFORM
+250mV
90%
90%
TF , -OS 10% 10% -250mV
Spec Number 3-189
511084-883
HFA1112/883 Burn-In Circuit
HFA1112MJ/883 CERAMIC DIP
1
300 300 +
8 7 6 5 R1
D3 V+ C1 D1
NC
D4 V-
2 3 4
D2
C2
NOTE: 1. R1 = 100, 5% (Per Socket) 2. C1 = C2 = 0.01F (Per Socket) or 0.1F (Per Row) Minimum 3. D1 = D2 = 1N4002 or Equivalent (Per Board) 4. D3 = D4 = 1N4002 or Equivalent (Per Socket) 5. V+ = +5.5V 0.5V 6. V- = -5.5V 0.5V
Spec Number 3-190
511084-883
HFA1112/883 Packaging
c1 -A-DBASE METAL E b1 M -Bbbb S BASE PLANE SEATING PLANE S1 b2 b ccc M C A-B S AA C A-B S D Q -CA L DS M (b) SECTION A-A (c) LEAD FINISH
F8.3A MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A)
8 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE INCHES SYMBOL A b b1 b2 b3 c c1 MIN 0.014 0.014 0.045 0.023 0.008 0.008 0.220 MAX 0.200 0.026 0.023 0.065 0.045 0.018 0.015 0.405 0.310 MILLIMETERS MIN 0.36 0.36 1.14 0.58 0.20 0.20 5.59 MAX 5.08 0.66 0.58 1.65 1.14 0.46 0.38 10.29 7.87 2.54 BSC 7.62 BSC 3.81 BSC 3.18 0.38 0.13 0.13 90o 8 5.08 1.52 105o 0.38 0.76 0.25 0.038 NOTES 2 3 4 2 3 5 5 6 7 2 8
eA
D E e eA eA/2 L Q S1 S2
0.100 BSC 0.300 BSC 0.150 BSC 0.125 0.015 0.005 0.005 90o 8 0.200 0.060 105o 0.015 0.030 0.010 0.0015
e
DS
eA/2
c
aaa M C A - B S D S
NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b1. 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling Dimension: Inch. 11. Lead Finish: Type A. 12. Materials: Compliant to MIL-M-38510.
aaa bbb ccc M N
Spec Number 3-191
511084-883
Semiconductor
HFA1112
Ultra High Speed Programmable Gain Buffer Amplifier
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified LARGE SIGNAL PULSE RESPONSE
2.0 AV = +2 1.5 OUTPUT VOLTAGE (V) 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 5ns/DIV 5ns/DIV
DESIGN INFORMATION
August 1999
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
200 AV = +2 150 OUTPUT VOLTAGE (mV) 100 50 0 -50
SMALL SIGNAL PULSE RESPONSE
-100 -150 -200
SMALL SIGNAL PULSE RESPONSE
200 150 OUTPUT VOLTAGE (mV) 100 50 0 -50 -100 -150 -200 5ns/DIV AV = +1 OUTPUT VOLTAGE (V) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0
LARGE SIGNAL PULSE RESPONSE
AV = +1
5ns/DIV
SMALL SIGNAL PULSE RESPONSE
200 150 OUTPUT VOLTAGE (mV) 100 50 0 -50 -100 -150 -200 5ns/DIV AV = -1 OUTPUT VOLTAGE (V) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0
LARGE SIGNAL PULSE RESPONSE
AV = -1
5ns/DIV
Spec Number 3-192
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
6 3 GAIN (dB) NORMALIZED 0 VOUT = 200mVp-p AV = +1
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
9 6 PHASE (DEGREES) RL = 50 RL = 100 RL = 1k 0 PHASE RL = 100 RL = 50 RL = 1k 0.3 1 10 100 FREQUENCY (MHz) -90 PHASE (DEGREES) PHASE (DEGREES) PHASE (DEGREES) AV = +2, VOUT = 200mVP-P
FREQUENCY RESPONSE
-3 -6 -9
GAIN
AV = -1 AV = +2 0 -90 AV = +2 AV = -1 AV = +1 -180 -270 -360
3 GAIN (dB) 0
GAIN
PHASE
-180 -270 -360 1000
0.3
1
10 FREQUENCY (MHz)
100
1000
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
6 3 0 PHASE (DEGREES) -3 GAIN (dB) -6 -9 0 PHASE RL = 100 RL = 50 RL = 1k 0.3 1 10 100 FREQUENCY (MHz) -90 -180 -270 -360 1000 GAIN RL = 100 RL = 50 AV = +1, VOUT = 200mVP-P RL = 1k
FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS
6 3 0 -3 GAIN (dB) -6 -9 RL = 100 180 PHASE 90 0 RL = 50 RL = 1k 0.3 1 10 100 FREQUENCY (MHz) -90 -180 1000 GAIN RL = 100 RL = 50 AV = -1, VOUT = 200mVP-P RL = 1k
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
12 9 6 3 GAIN (dB) 0 PHASE 4.0VP-P 2.5VP-P 0 -90 4.0VP-P 2.5VP-P 1VP-P 0.3 1 10 100 FREQUENCY (MHz) -180 -270 -360 1000 GAIN PHASE (DEGREES) AV = +2 1VP-P
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
6 3 0 GAIN -3 GAIN (dB) -6 VOUT = 4VP-P VOUT = 2.5VP-P VOUT = 1VP-P 0 PHASE -90 VOUT = 4VP-P VOUT = 2.5VP-P VOUT = 1VP-P 0.3 1 10 100 FREQUENCY (MHz) -180 -270 -360 1000 AV = +1
Spec Number 3-193
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
6 3 GAIN 0 -3 GAIN (dB) -6 PHASE AV = -1 VOUT = 2.5VP-P VOUT = 4VP-P
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) FULL POWER BANDWIDTH
15 12 9 PHASE (DEGREES) GAIN (dB) NORMALIZED VOUT = 5VP-P
FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES
VOUT = 1VP-P
6 3 0 -3 -6 -9 -12 -15 0.3 1 10 FREQUENCY (MHz) 100 1000 AV = -1 AV = +2 AV = +1
180 90 VOUT = 4VP-P VOUT = 2.5VP-P VOUT = 1VP-P -180 0.3 1 10 100 FREQUENCY (MHz) 1000 0 -90
-3dB BANDWIDTH vs TEMPERATURE
900 850 800 BANDWIDTH (MHz) 750 700 650 600 AV = +2 550 500 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) AV = +1 AV = -1 GAIN (dB) NORMALIZED 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 -0.05 -0.10 -0.15 1
GAIN FLATNESS
AV = +1
AV = -1
AV = +2
10 FREQUENCY (MHz)
100
DEVIATION FROM LINEAR PHASE
4 3 DEVIATION (DEGREES) 2 1 0 -1 -2 -3 -4 -5 -6 0 15 30 45 60 75 90 105 120 135 150 -2 3 AV = +1 AV = +2 AV = -1 SETTLING ERROR (%) 0.6 0.4 0.2 0.1 0 -0.1 -0.2 -0.4 -0.6
SETTLING RESPONSE
AV = +2, VOUT = 2V
8
13
18
23
28
33
38
43
48
FREQUENCY (MHz)
TIME (ns)
Spec Number 3-194
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
-24 -30
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) HIGH FREQUENCY REVERSE ISOLATION (S12)
235 180 PHASE AV = +1 GAIN (dB) -24 -30 -36 -42 GAIN AV = +2 AV = +1 AV = -1 AV = +1 AV = -1 AV = +2 90 45 0 PHASE (DEGREES)
LOW FREQUENCY REVERSE ISOLATION (S12)
-36 -42 GAIN (dB) -48 -54 -60 -66 -72 -78 -84 0 20 40 60 80 100 120 140 160 180 200 FREQUENCY (MHz) AV = +2 AV = -1 AV = +2 AV = -1
-48 -54 -60 100 190 280 370 460 550 640 730 FREQUENCY (MHz) 820 910 1000
1dB GAIN COMPRESSION vs FREQUENCY
OUTPUT POWER AT 1dB COMPRESSION (dBm) 20 18 16 14 AV = +2 12 10 8 6 4 2 0 100 200 300 FREQUENCY (MHz) 400 500 AV = +1 AV = -1
3rd ORDER INTERMODULATION INTERCEPT vs FREQUENCY
30 2 - TONE
INTERCEPT POINT (dBm)
AV = -1 20 AV = +2
AV = +1 10
0 100
200
300
400
FREQUENCY (MHz)
2nd HARMONIC DISTORTION vs POUT
-20 -30 DISTORTION (dBc) -40 -50 -60 100MHz -70 -80 -90 -100 -6 -3 0 3 6 9 12 15 OUTPUT POWER (dBm) 50MHz 30MHz AV = +2 -20 -30 -40 -50 -60 -70 -80 -90 -100 -6
3rd HARMONIC DISTORTION vs POUT
AV = +2
DISTORTION (dBc)
30MHz 50MHz 100MHz
-3
0
3
6
9
12
15
18
OUTPUT POWER (dBm)
Spec Number 3-195
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
-20 AV = +1 -30 -40 DISTORTION (dBc) -50 -60 -70 -80 -90 -100 -6 -3 0 100MHz 50MHz 30MHz
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) 3rd HARMONIC DISTORTION vs POUT
-20 AV = +1 -30 -40 DISTORTION (dBc) -50 -60 -70 100MHz -80 -90 -100 -6 50MHz 30MHz
2nd HARMONIC DISTORTION vs POUT
3 6 9 OUTPUT POWER (dBm)
12
15
-3
0 3 6 9 OUTPUT POWER (dBm)
12
15
2nd HARMONIC DISTORTION vs POUT
-20 AV = -1 -30 -40 DISTORTION (dBc) DISTORTION (dBc) -50 -60 -70 -80 -90 -100 -6 -3 0 3 6 9 OUTPUT POWER (dBm) 12 15 100MHz 50MHz 30MHz -30 -40 -50 -60 -70 -80 -20
3rd HARMONIC DISTORTION vs POUT
AV = -1
50MHz -90 -100 -6 -3 0 3 6 100MHz
30MHz
9
12
15
OUTPUT POWER (dBm)
INTEGRAL LINEARITY ERROR
+0.04 60
OVERSHOOT vs INPUT RISE TIME
VOUT = 0.5V 50
PERCENT ERROR (%)
+0.02 OVERSHOOT (%) 40
AV = +1
0
30
20 AV = -1 10 AV = +2 0
-0.02
-0.04 -3.0 -2.0 -1.0 0 +1.0 INPUT VOLTAGE (V) +2.0 +3.0
100
300
500
700
900
1100
1300
INPUT RISE TIME (ps)
Spec Number 3-196
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
60 VOUT = 1V 50 OVERSHOOT (%)
VSUPPLY = 5V, RL = 100, TA = +25oC, Unless Otherwise Specified (Continued) OVERSHOOT vs INPUT RISE TIME
60 VOUT = 2V 50 OVERSHOOT (%)
OVERSHOOT vs INPUT RISE TIME
40
AV = +1
40 AV = +1
30
30
20 AV = -1 AV = +2 0 100 300 500 700 900 1100 1300
20 AV = +2 10 AV = -1 0 100 300 500 700 900 1100 1300
10
INPUT RISE TIME (ps)
INPUT RISE TIME (ps)
SUPPLY CURRENT vs SUPPLY VOLTAGE
22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 5 6 7 8 9 10 TOTAL SUPPLY VOLTAGE (V+ - V-, V) 25 24 23 SUPPLY CURRENT (mA) 22 21 20 19 18 17 16 15
SUPPLY CURRENT vs TEMPERATURE
SUPPLY CURRENT (mA)
-50
-25
0
25
50
75
100
125
TEMPERATURE (oC)
OUTPUT VOLTAGE vs TEMPERATURE
3.6 AV = -1 3.5 +VOUT (RL = 100) |-VOUT| (RL = 100) 3.4 OUTPUT VOLTAGE (V) 3.3 3.2 3.1 3.0 2.9 2.8 2.7 2.6 -50 -25 0 25 50 75 TEMPERATURE (oC) 100 125 0 0.1 |-VOUT| (RL = 50) +VOUT (RL = 50) 40 50
INPUT NOISE CHARACTERISTICS
130
30
90
20 eni 10 ini
70
50
1 10 FREQUENCY (kHz)
30 100
Spec Number 3-197
511084-883
NOISE CURRENT (pA/Hz)
NOISE VOLTAGE (nV/Hz)
110
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Application Information
Closed Loop Gain Selection The HFA1112 features a novel design which allows the user to select from three closed loop gains, without any external components. The result is a more flexible product, fewer part types in inventory, and more efficient use of board space. This "buffer" operates in closed loop gains of -1, +1, or +2, and gain selection is accomplished via connections to the inputs. Applying the input signal to +IN and floating -IN selects a gain of +1, while grounding -IN selects a gain of +2. A gain of -1 is obtained by applying the input signal to -IN with +IN grounded. The table below summarizes these connections:
CONNECTIONS GAIN (ACL) -1 +1 +2 +INPUT (PIN 3) GND Input Input -INPUT (PIN 2) Input NC (Floating) GND
Driving Capacitive Loads
Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier's phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing RS as CL increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, RS = 50, CL = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1, RS = 5, CL = 340pF.
PC Board Layout
The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10F) tantalum in parallel with a small value (0.1F) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. For unity gain applications, care must also be taken to minimize the capacitance to ground seen by the amplifier's inverting input. At higher frequencies this capacitance will tend to short the -INPUT to GND, resulting in a closed loop gain which increases with frequency. This will cause excessive high frequency peaking and potentially other problems as well. An example of a good high frequency layout is the Evaluation Board shown in Figure 2.
50 45 40 35 30 25 20 15 10 5 0
RS ()
AV = +1
AV = +2 0 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF)
FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE
Spec Number 3-198
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Evaluation Board
The performance of the HFA1112 may be evaluated using the HFA11XX Evaluation Board, slightly modified as follows: 1. Remove the 500 feedback resistor (R2), and leave the connection open. 2. a. For AV = +1 evaluation, remove the 500 gain setting resistor (R1), and leave pin 2 floating. b. For AV = +2, replace the 500 gain setting resistor with a 0 resistor to GND. The layout and modified schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office.
IN 0.1F -5V GND +IN OUT V+ VL VGND
TOP LAYOUT
VH 1
BOTTOM LAYOUT
(AV = +1) or 0 (AV = +2)
R1 50 1 2 3 4 10F 8 7
VH 0.1F 50 6 5 GND OUT VL 10F +5V
FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT
Spec Number 3-199
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 5V, AV = +1V/V, RL = 100, Unless Otherwise Specified PARAMETERS Output Offset Voltage Average Offset Voltage Drift +Input Current +Input Resistance +Input Noise Voltage +Input Noise Current Input Common Mode Range Gain Gain DC Non-Linearity Output Current AV = +1, VIN = 2V AV = +2, VIN = 1V AV = +2, 2V Full Scale AV = -1, RL = 50 AV = -1, RL = 50 DC Closed Loop Output Resistance Quiescent Supply Current -3dB Bandwidth AV = +2 RL = Open AV = -1, VOUT = 200mVP-P AV = +1, VOUT = 200mVP-P AV = +2, VOUT = 200mVP-P Slew Rate AV = -1, VOUT = 5VP-P AV = +1, VOUT = 5VP-P AV = +2, VOUT = 5VP-P Full Power Bandwidth AV = -1, VOUT = 5VP-P AV = +1, VOUT = 5VP-P AV = +2, VOUT = 5VP-P Gain Flatness To 30MHz, AV = -1 To 30MHz, AV = +1 To 30MHz, AV = +2 Gain Flatness To 50MHz, AV = -1 To 50MHz, AV = +1 To 50MHz, AV = +2 Gain Flatness To 100MHz, AV = -1 To 100MHz, AV = +2 Linear Phase Deviation To 100MHz, AV = -1 To 100MHz, AV = +1 To 100MHz, AV = +2 2nd Harmonic Distortion 30MHz, AV = -1, VOUT = 2VP-P 30MHz, AV = +1, VOUT = 2VP-P 30MHz, AV = +2, VOUT = 2VP-P VCM = 0V Versus Temperature VCM = 0V VCM = 2V f = 100kHz f = 100kHz CONDITIONS TEMPERATURE +25oC Full +25oC +25 C +25
oC o
TYPICAL 8 10 25 50 9 37 2.8 0.99 1.98 0.02 60 50 0.3 24 800 850 550 2400 1500 1900 300 150 220 0.02 0.10 0.015 0.05 0.20 0.036 0.10 0.07 0.13 0.83 0.05 -52 -57 -52
UNITS mV V/oC A k nV/Hz pA/Hz V V/V V/V % mA mA mA MHz MHz MHz V/s V/s V/s MHz MHz MHz dB dB dB dB dB dB dB dB Degrees Degrees Degrees dBc dBc dBc
+25oC Full +25 C +25oC +25oC +25oC to +125oC 0oC
o
-55oC
to
o
+25 C Full +25oC +25oC +25oC +25 C +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC
o o
Spec Number 3-200
511084-883
HFA1112
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 5V, AV = +1V/V, RL = 100, Unless Otherwise Specified PARAMETERS 3rd Harmonic Distortion CONDITIONS 30MHz, AV = -1, VOUT = 2VP-P 30MHz, AV = +1, VOUT = 2VP-P 30MHz, AV = +2, VOUT = 2VP-P 2nd Harmonic Distortion 50MHz, AV = -1, VOUT = 2VP-P 50MHz, AV = +1, VOUT = 2VP-P 50MHz, AV = +2, VOUT = 2VP-P 3rd Harmonic Distortion 50MHz, AV = -1, VOUT = 2VP-P 50MHz, AV = +1, VOUT = 2VP-P 50MHz, AV = +2, VOUT = 2VP-P 2nd Harmonic Distortion 100MHz, AV = -1, VOUT = 2VP-P 100MHz, AV = +1, VOUT = 2VP-P 100MHz, AV = +2, VOUT = 2VP-P 3rd Harmonic Distortion 100MHz, AV = -1, VOUT = 2VP-P 100MHz, AV = +1, VOUT = 2VP-P 100MHz, AV = +2, VOUT = 2VP-P 3rd Order Intercept 100MHz, AV = +2 300MHz, AV = +2 1dB Compression 100MHz, AV = +2 300MHz, AV = +2 Reverse Isolation (S12) 40MHz 100MHz 600MHz Rise & Fall Time AV = -1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P Overshoot AV = -1, VOUT = 0.5VP-P AV = +1, VOUT = 0.5VP-P AV = +2, VOUT = 0.5VP-P Settling Time AV = +2, to 0.1%, VOUT = 2V to 0V AV = +2, to 0.05%, VOUT = 2V to 0V AV = +2, to 0.02%, VOUT = 2V to 0V Overdrive Recovery Time Differential Gain Differential Phase AV = +2, VIN = 5VP-P AV = +2, RL = 150, NTSC AV = +2, RL = 150, NTSC TEMPERATURE +25oC +25oC +25oC +25 C +25oC +25oC +25 C +25 C +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25
oC o o o o
TYPICAL -71 -73 -72 -47 -53 -47 -63 -68 -65 -41 -50 -42 -55 -49 -62 28 13 19 12 -70 -60 -32 500 480 700 12 45 6 13 20 36 8.5 0.02 0.04
UNITS dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBm dBm dBm dBm dB dB dB ps ps ps % % % ns ns ns ns % Degrees
+25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC
Spec Number 3-201
511084-883
HFA1112/883
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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3-202

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